- Springer Vienna
- 2012
- Taschenbuch
- 280 Seiten
- ISBN 9783709172261
This monograph is the first on physics-based simulations of novel strained Si and SiGe devices. It provides an in-depth description of the full-band monte- carlo method for SiGe and discusses the common theoretical background of the drift-diffusion, hydrodynamic and Monte-Carlo models and their synergy.
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